The INN100EA035FAD is a 100 V enhancement-mode GaN-on-silicon high-electron-mobility transistor from Innoscience in a 3.3 mm x 3.3 mm En-FCLGA package. It combines 2.7 mOhm typical on-resistance with very low gate charge (10.3 nC) and zero reverse-recovery charge, enabling high-frequency and high-density power conversion. The device is aimed at high-frequency DC-DC converters, high-density DC-DC power modules, synchronous rectification, motor drivers and solar MPPT.
Highlights
- 100 V drain-source rating with 2.7 mOhm typical RDS(on) at VGS = 5 V
- 180 A continuous drain current at TC = 25 C and 390 A pulsed current
- 10.3 nC total gate charge and 42 nC output charge
- Zero reverse recovery charge (QRR = 0 nC)
- 0.49 C/W junction-to-case thermal resistance in a 3.3 x 3.3 mm package
- En-FCLGA package, product code J67, MSL3 at 260 C reflow
Technical parameters
Electrical
| Drain-source voltage (VDS, max.) | 100 V |
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| Drain-source transient voltage (1 h total, TA = TJMAX) | 120 V |
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| Continuous drain current (VGS = 5 V, TC = 25 C) | 180 A |
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| Continuous drain current (VGS = 5 V, TC = 100 C) | 115 A |
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| Continuous drain current (VGS = 5 V, TA = 25 C) | 18 A |
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| Pulsed drain current (TJ = 25 C, 100 us) | 390 A |
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| Pulsed drain current (TJ = 150 C, 100 us) | 290 A |
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| Drain-source on-state resistance (VGS = 5 V, ID = 2.5 A, typ.) | 2.7 mohm |
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| Drain-source on-state resistance (VGS = 5 V, max.) | 3.5 mohm |
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| Gate threshold voltage (VGS(TH), ID = 7.6 mA) | 0.8 V to 2.1 V |
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| Maximum gate-to-source voltage | +6 V / -4 V |
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| Gate-to-source transient voltage (168 h total) | 6.5 V |
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| Source-drain forward voltage (IS = 25 A, VGS = 0 V, typ.) | 1.9 V |
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| Power dissipation (TC = 25 C) | 252 W |
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| Power dissipation (TA = 25 C) | 2.6 W |
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Switching
| Total gate charge (QG, VDS = 0 V to 50 V, ID = 25 A) | 10.3 nC |
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| Gate-to-source charge (QGS) | 2.9 nC |
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| Gate-to-drain charge (QGD) | 1.2 nC |
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| Output charge (QOSS, VDS = 0 V to 50 V) | 42 nC |
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| Reverse recovery charge (QRR) | 0 nC |
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| Input capacitance (CISS, VDS = 50 V) | 1475 pF |
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| Output capacitance (COSS, VDS = 50 V) | 425 pF |
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| Reverse transfer capacitance (CRSS, VDS = 50 V) | 5.3 pF |
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| Gate resistance (RG, f = 5 MHz) | 1.5 ohm |
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Thermal
| Thermal resistance junction-to-case (RthetaJC) | 0.49 C/W |
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| Thermal resistance junction-to-board (RthetaJB) | 4.16 C/W |
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| Thermal resistance junction-to-ambient (RthetaJA) | 47.13 C/W |
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| Operating junction temperature (TJ) | -40 C to +150 C |
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| Storage temperature (TSTG) | -40 C to +150 C |
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Package
| Package type | En-FCLGA 3.3 mm x 3.3 mm |
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| Pin count and function | 9 pins: gate, 4 source, 4 drain |
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Reliability
| Maximum reflow soldering temperature | 260 C |
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| Moisture sensitivity level (MSL) | MSL3 |
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Ordering
| Ordering code | INN100EA035FAD |
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| Product code | J67 |
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Applications
- High-frequency DC-DC converters
- High-density DC-DC power modules
- Synchronous rectification
- Motor drivers
- Solar system MPPT
- 48 V data-centre power conversion
Manufacturer
Innoscience Technology, Suzhou, Jiangsu · https://www.innoscience.com
Innoscience Technology (英诺赛科) is a Chinese GaN-on-silicon power-device manufacturer offering enhancement-mode GaN HEMTs and integrated GaN ICs across low-voltage and high-voltage families. Its devices target high-frequency DC-DC conversion, high-density DC-DC power modules, synchronous rectification, motor drives and solar MPPT. Product selector tables with published voltage, on-resistance, charge and current figures, plus downloadable datasheets, are hosted on the official website. No public sales email or phone number was verified on the official site during this research.
Sources
- https://www.innoscience.com/mtsc/uploads/Ckeditor/Files/2026-09-03/INN100EA035FAD_Datasheet_Rev_1.1.pdf
- https://www.innoscience.com/products/lv-gan-hemt