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Sanan AMS1200075K 1200 V / 75 mOhm SiC Power MOSFET

Sanan Semiconductor Co., Ltd. · Model AMS1200075K · Semiconductors & Electronic Components

Verified 13 Sept 2026

AEC-Q101 1200 V SiC MOSFET, 75 mOhm typical, 175 C, TO-247-3L

The AMS1200075K is a 1200 V, 75 mOhm silicon carbide power MOSFET in a TO-247-3L package from Sanan Semiconductor. It offers high blocking voltage, low on-resistance and low switching losses, with a robust intrinsic body diode and a 175 C maximum operating junction temperature. The device is AEC-Q101 qualified and RoHS compliant, and is aimed at solar inverters, uninterruptible power supplies, switch-mode power supplies and motor drives.

Highlights

1200 V drain-source voltage with 75 mOhm typical on-resistance at VGS = 15 V
35 A continuous drain current at 25 C and 25 A at 100 C case temperature
AEC-Q101 qualified and RoHS compliant for automotive and industrial use
175 C maximum operating junction temperature
58 nC total gate charge and 1484 pF input capacitance
TO-247-3L package, ordering part number AMS1200075K-ASATH

Technical parameters

Electrical

Drain-source voltage (VDSmax)	1200 V
Continuous drain current (TC = 25 C, VGS = 15 V)	35 A
Continuous drain current (TC = 100 C)	25 A
Pulsed drain current (ID pulse)	88 A
Drain-source on-state resistance (VGS = 15 V, ID = 18 A, 25 C, typ.)	75 mohm
Drain-source on-state resistance (25 C, max.)	92 mohm
Drain-source on-state resistance (Tj = 175 C, typ.)	110 mohm
Gate threshold voltage (VGS(th), 25 C)	1.8 V to 4.0 V
Recommended gate-source operating voltage (VGSop)	-4 V / +15 V
Maximum gate-source transient voltage (tp <= 0.5 us)	-10 V / +22 V
Power dissipation (Ptot)	208 W
Transconductance (gfs, VDS = 20 V, ID = 18 A, typ.)	13 S
Internal gate resistance (Rg(int))	1.9 ohm
Diode forward voltage (VSD, VGS = -4 V, ISD = 9 A, typ.)	3.5 V

Thermal

Thermal resistance junction-to-case (Rth(j-c), typ.)	0.60 C/W
Thermal resistance junction-to-ambient (Rth(j-a), max.)	40 C/W
Operating junction temperature (Tj)	-55 C to +175 C
Storage temperature (Tstg)	-55 C to +175 C
Soldering temperature (TL, 1.6 mm from case, 10 s)	260 C

Switching

Turn-on delay time (25 C, RG(ext) = 5.1 ohm)	32 ns
Rise time (25 C)	19 ns
Turn-off delay time (25 C)	25 ns
Fall time (25 C)	13 ns
Turn-on switching energy Eon (VDD = 800 V, ID = 20 A, 25 C)	542 uJ
Turn-off switching energy Eoff (25 C)	78 uJ
Turn-on switching energy Eon (Tj = 175 C)	685 uJ
Turn-off switching energy Eoff (Tj = 175 C)	81 uJ
Input capacitance (Ciss, VDS = 1000 V, f = 1 MHz)	1484 pF
Output capacitance (Coss)	79 pF
Reverse transfer capacitance (Crss)	1 pF
Total gate charge (QG, VDD = 800 V, ID = 18 A)	58 nC
Gate-to-drain charge (QGD)	20 nC
COSS stored energy (Eoss)	44 uJ
Reverse recovery time (trr, ISD = 20 A, 25 C)	38 ns
Reverse recovery charge (Qrr, 25 C)	0.20 uC

Package

Package type	TO-247-3L
Mounting torque (M3 screw)	0.7 Nm

Reliability

Qualification	AEC-Q101
Compliance	RoHS compliant

Ordering

Ordering part number	AMS1200075K-ASATH
Unit quantity per packing	300 EA
Packing type	Tube

Applications

Solar inverters
Uninterruptible power supplies (UPS)
Switch mode power supplies
Motor drives
Energy storage power conversion
Industrial high-frequency power stages

Manufacturer

Sanan Semiconductor Co., Ltd., Changsha, Hunan · https://www.sanan-semiconductor.com

Sanan Semiconductor Co., Ltd. is the silicon-carbide device business of Sanan Optoelectronics, based in the Hi-tech Industrial Development Zone, Changsha, Hunan. It supplies 650 V to 1700 V SiC power MOSFETs and Schottky barrier diodes together with SiC substrate and epitaxy capability, serving solar inverters, UPS, switch-mode power supplies and motor drives. Its contact page publishes sales@sanan-ic.com and +86-731-82735135. The AMS1200075K 1200 V SiC MOSFET in this catalogue is AEC-Q101 qualified.

Sources

https://www.sanan-semiconductor.com/Public/Uploads/uploadfile2/files/20250312/SananSemiconductorAMS1200075KDatasheet-649.pdf
https://www.sanan-semiconductor.com/en/mosfet