Product datasheet · pro.rungiw.xyz

Sanan SMS1200032P2 1200 V / 32 mOhm SiC Power MOSFET

Sanan Semiconductor Co., Ltd. · Model SMS1200032P2 · Semiconductors & Electronic Components

Verified 13 Sept 2026

1200 V SiC MOSFET with 32 mOhm typical on-resistance in TO-263-7L

The SMS1200032P2 is a 1200 V, 32 mOhm silicon carbide power MOSFET from Sanan Semiconductor supplied in a surface-mount TO-263-7L package. It combines high blocking voltage with low on-resistance, low switching losses and a fast intrinsic body diode, and operates up to a 175 C junction temperature. The part is RoHS compliant and targeted at solar inverters, uninterruptible power supplies, switch-mode power supplies and motor drives.

Highlights

1200 V drain-source voltage with 32 mOhm typical RDS(on) at VGS = 18 V
57 A continuous drain current at 25 C and 41 A at 100 C case temperature
Low switching loss: 286 uJ Eon and 89 uJ Eoff at 40 A, 25 C
Fast body diode with 11 ns turn-on delay and 7 ns fall time at 25 C
0.45 C/W junction-to-case thermal resistance, 175 C maximum junction temperature
Surface-mount TO-263-7L package, 143 A pulsed drain current

Technical parameters

Electrical

Drain-source voltage (VDSmax)	1200 V
Continuous drain current (TC = 25 C, VGS = 18 V)	57 A
Continuous drain current (TC = 100 C)	41 A
Pulsed drain current (ID pulse)	143 A
Drain-source on-state resistance (VGS = 18 V, ID = 40 A, typ.)	32 mohm
Drain-source on-state resistance (VGS = 18 V, 25 C, max.)	42 mohm
Drain-source on-state resistance (VGS = 15 V, 25 C, typ.)	37 mohm
Drain-source on-state resistance (Tj = 175 C, typ.)	53 mohm
Gate threshold voltage (VGS(th), 25 C)	1.8 V to 4.2 V
Recommended gate-source operating voltage (VGSop)	-5 V / +18 V
Maximum gate-source transient voltage (tp <= 0.5 us)	-10 V / +25 V
Power dissipation (Ptot)	278 W
Transconductance (gfs, VDS = 20 V, ID = 40 A, typ.)	24 S
Internal gate resistance (Rg(int))	3.6 ohm

Thermal

Thermal resistance junction-to-case (Rth(j-c), typ.)	0.45 C/W
Thermal resistance junction-to-ambient (Rth(j-a), max.)	62 C/W
Operating junction temperature (Tj)	-55 C to +175 C
Storage temperature (Tstg)	-55 C to +175 C
Soldering temperature (TL, 10 s)	260 C

Switching

Turn-on delay time (25 C, RG(ext) = 2.4 ohm)	11 ns
Rise time (25 C)	14 ns
Turn-off delay time (25 C)	27 ns
Fall time (25 C)	7 ns
Turn-on switching energy Eon (VDD = 800 V, ID = 40 A, 25 C)	286 uJ
Turn-off switching energy Eoff (25 C)	89 uJ
Turn-on switching energy Eon (Tj = 175 C)	331 uJ
Turn-off switching energy Eoff (Tj = 175 C)	91 uJ
Input capacitance (Ciss, VDS = 1000 V, f = 100 kHz)	2160 pF
Output capacitance (Coss)	79 pF
Reverse transfer capacitance (Crss)	1.2 pF
Total gate charge (QG, VDD = 800 V, ID = 40 A)	91 nC
Gate-to-source charge (QGS)	30 nC
Gate-to-drain charge (QGD)	27 nC
COSS stored energy (Eoss)	50 uJ

Package

Package type	TO-263-7L

Reliability

Compliance	RoHS compliant
Intended qualification	Industrial application

Applications

Solar inverters
Uninterruptible power supplies (UPS)
Switch mode power supplies
Motor drives
Energy storage converters
On-board and industrial battery chargers

Manufacturer

Sanan Semiconductor Co., Ltd., Changsha, Hunan · https://www.sanan-semiconductor.com

Sanan Semiconductor Co., Ltd. is the silicon-carbide device business of Sanan Optoelectronics, based in the Hi-tech Industrial Development Zone, Changsha, Hunan. It supplies 650 V to 1700 V SiC power MOSFETs and Schottky barrier diodes together with SiC substrate and epitaxy capability, serving solar inverters, UPS, switch-mode power supplies and motor drives. Its contact page publishes sales@sanan-ic.com and +86-731-82735135. The AMS1200075K 1200 V SiC MOSFET in this catalogue is AEC-Q101 qualified.

Sources

https://www.sanan-semiconductor.com/Cn/Skippower/downloadFile?id=2463&mid=26
https://www.sanan-semiconductor.com/en/mosfet