Technical datasheet · pro.rungiw.xyz
1200 V 75 mOhm SiC Power MOSFET (TO-247)
SinoPro · Model SP-SC-003 · Semiconductors & Electronic Components
The SP-SC-003 is a 1200 V, 75 mOhm silicon carbide power MOSFET in a TO-247-3L package. It offers high blocking voltage, low on-resistance and low switching losses, with a robust intrinsic body diode and a 175 C maximum operating junction temperature. The device is AEC-Q101 qualified and compliant, and is aimed at solar inverters, uninterruptible power supplies, switch-mode power supplies and motor drives.
Highlights
- 1200 V drain-source voltage with 75 mOhm typical on-resistance at VGS = 15 V
- 35 A continuous drain current at 25 C and 25 A at 100 C case temperature
- AEC-Q101 qualified and compliant for automotive and industrial use
- 175 C maximum operating junction temperature
- 58 nC total gate charge and 1484 pF input capacitance
- TO-247-3L package, ordering part number SP-SC-003-ASATH
Technical parameters
Electrical
| Drain-source voltage (VDSmax) | 1200 V |
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| Continuous drain current (TC = 25 C, VGS = 15 V) | 35 A |
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| Continuous drain current (TC = 100 C) | 25 A |
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| Pulsed drain current (ID pulse) | 88 A |
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| Drain-source on-state resistance (VGS = 15 V, ID = 18 A, 25 C, typ.) | 75 mohm |
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| Drain-source on-state resistance (25 C, max.) | 92 mohm |
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| Drain-source on-state resistance (Tj = 175 C, typ.) | 110 mohm |
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| Gate threshold voltage (VGS(th), 25 C) | 1.8 V to 4.0 V |
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| Recommended gate-source operating voltage (VGSop) | 4 V / +15 V |
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| Maximum gate-source transient voltage (tp <= 0.5 us) | 10 V / +22 V |
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| Power dissipation (Ptot) | 208 W |
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| Transconductance (gfs, VDS = 20 V, ID = 18 A, typ.) | 13 S |
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| Internal gate resistance (Rg(int)) | 1.9 ohm |
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| Diode forward voltage (VSD, VGS = -4 V, ISD = 9 A, typ.) | 3.5 V |
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Thermal
| Thermal resistance junction-to-case (Rth(j-c), typ.) | 0.60 C/W |
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| Thermal resistance junction-to-ambient (Rth(j-a), max.) | 40 C/W |
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| Operating junction temperature (Tj) | 55 C to +175 C |
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| Storage temperature (Tstg) | 55 C to +175 C |
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| Soldering temperature (TL, 1.6 mm from case, 10 s) | 260 C |
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Switching
| Turn-on delay time (25 C, RG(ext) = 5.1 ohm) | 32 ns |
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| Rise time (25 C) | 19 ns |
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| Turn-off delay time (25 C) | 25 ns |
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| Fall time (25 C) | 13 ns |
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| Turn-on switching energy Eon (VDD = 800 V, ID = 20 A, 25 C) | 542 |
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| Turn-off switching energy Eoff (25 C) | 78 |
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| Turn-on switching energy Eon (Tj = 175 C) | 685 |
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| Turn-off switching energy Eoff (Tj = 175 C) | 81 |
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| Input capacitance (Ciss, VDS = 1000 V, f = 1 MHz) | 1484 pF |
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| Output capacitance (Coss) | 79 pF |
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| Reverse transfer capacitance (Crss) | 1 pF |
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| Total gate charge (QG, VDD = 800 V, ID = 18 A) | 58 nC |
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| Gate-to-drain charge (QGD) | 20 nC |
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| COSS stored energy (Eoss) | 44 |
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| Reverse recovery time (trr, ISD = 20 A, 25 C) | 38 ns |
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| Reverse recovery charge (Qrr, 25 C) | 0.20 uC |
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Package
| Package type | TO-247-3L |
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| Mounting torque (M3 screw) | 0.7 Nm |
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Reliability
| Qualification | AEC-Q101 |
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| Compliance | compliant |
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Ordering
| Ordering part number | SP-SC-003-ASATH |
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| Unit quantity per packing | 300 EA |
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| Packing type | Tube |
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Applications
- Solar inverters
- Uninterruptible power supplies (UPS)
- Switch mode power supplies
- Motor drives
- Energy storage power conversion
- Industrial high-frequency power stages
Supply & contact
Supplied by SinoPro. Quotations, samples, OEM/ODM, inspection, consolidation shipping and after-sales are handled
directly by us. Request pricing and the current technical revision through https://pro.rungiw.xyz/contact.