The SP-SC-004 is a 1200 V, 32 mOhm silicon carbide power MOSFET supplied in a surface-mount TO-263-7L package. It combines high blocking voltage with low on-resistance, low switching losses and a fast intrinsic body diode, and operates up to a 175 C junction temperature. The part is compliant and targeted at solar inverters, uninterruptible power supplies, switch-mode power supplies and motor drives.
Highlights
- 1200 V drain-source voltage with 32 mOhm typical RDS(on) at VGS = 18 V
- 57 A continuous drain current at 25 C and 41 A at 100 C case temperature
- Low switching loss: 286 Eon and 89 Eoff at 40 A, 25 C
- Fast body diode with 11 ns turn-on delay and 7 ns fall time at 25 C
- 0.45 C/W junction-to-case thermal resistance, 175 C maximum junction temperature
- Surface-mount TO-263-7L package, 143 A pulsed drain current
Technical parameters
Electrical
| Drain-source voltage (VDSmax) | 1200 V |
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| Continuous drain current (TC = 25 C, VGS = 18 V) | 57 A |
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| Continuous drain current (TC = 100 C) | 41 A |
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| Pulsed drain current (ID pulse) | 143 A |
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| Drain-source on-state resistance (VGS = 18 V, ID = 40 A, typ.) | 32 mohm |
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| Drain-source on-state resistance (VGS = 18 V, 25 C, max.) | 42 mohm |
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| Drain-source on-state resistance (VGS = 15 V, 25 C, typ.) | 37 mohm |
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| Drain-source on-state resistance (Tj = 175 C, typ.) | 53 mohm |
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| Gate threshold voltage (VGS(th), 25 C) | 1.8 V to 4.2 V |
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| Recommended gate-source operating voltage (VGSop) | 5 V / +18 V |
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| Maximum gate-source transient voltage (tp <= 0.5 us) | 10 V / +25 V |
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| Power dissipation (Ptot) | 278 W |
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| Transconductance (gfs, VDS = 20 V, ID = 40 A, typ.) | 24 S |
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| Internal gate resistance (Rg(int)) | 3.6 ohm |
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Thermal
| Thermal resistance junction-to-case (Rth(j-c), typ.) | 0.45 C/W |
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| Thermal resistance junction-to-ambient (Rth(j-a), max.) | 62 C/W |
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| Operating junction temperature (Tj) | 55 C to +175 C |
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| Storage temperature (Tstg) | 55 C to +175 C |
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| Soldering temperature (TL, 10 s) | 260 C |
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Switching
| Turn-on delay time (25 C, RG(ext) = 2.4 ohm) | 11 ns |
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| Rise time (25 C) | 14 ns |
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| Turn-off delay time (25 C) | 27 ns |
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| Fall time (25 C) | 7 ns |
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| Turn-on switching energy Eon (VDD = 800 V, ID = 40 A, 25 C) | 286 |
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| Turn-off switching energy Eoff (25 C) | 89 |
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| Turn-on switching energy Eon (Tj = 175 C) | 331 |
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| Turn-off switching energy Eoff (Tj = 175 C) | 91 |
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| Input capacitance (Ciss, VDS = 1000 V, f = 100 kHz) | 2160 pF |
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| Output capacitance (Coss) | 79 pF |
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| Reverse transfer capacitance (Crss) | 1.2 pF |
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| Total gate charge (QG, VDD = 800 V, ID = 40 A) | 91 nC |
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| Gate-to-source charge (QGS) | 30 nC |
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| Gate-to-drain charge (QGD) | 27 nC |
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| COSS stored energy (Eoss) | 50 |
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Reliability
| Compliance | compliant |
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| Intended qualification | Industrial application |
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Applications
- Solar inverters
- Uninterruptible power supplies (UPS)
- Switch mode power supplies
- Motor drives
- Energy storage converters
- On-board and industrial battery chargers
Supply & contact
Supplied by SinoPro. Quotations, samples, OEM/ODM, inspection, consolidation shipping and after-sales are handled
directly by us. Request pricing and the current technical revision through https://pro.rungiw.xyz/contact.