The SP-SC-006 is a 1200 V, 100 A IGBT power module in a two-in-one package using SP-SC-006's low-VCE(sat) trench IGBT technology. It pairs a fast, soft-recovery anti-parallel freewheeling diode with an isolated copper baseplate using DBC technology, and is rated for a 175 C maximum junction temperature with 10 us short-circuit withstand. SP-SC-006 positions it for switching mode power supplies, inductive heating and electronic welding equipment.
Highlights
- 1200 V collector-emitter voltage with 162 A at TC = 25 C and 100 A at TC = 100 C
- Low saturation voltage: 1.85 V typical at 100 A and 25 C, 2.35 V at 150 C
- 10 us short-circuit capability with 400 A short-circuit current at 800 V
- Fast and soft reverse recovery anti-parallel FWD with 7.92 uC recovered charge at 25 C
- Isolated copper baseplate DBC construction with 2500 V RMS isolation voltage
- 175 C maximum junction temperature and 595 W maximum power dissipation
Technical parameters
Electrical
| Collector-emitter voltage (VCES) | 1200 V |
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| Gate-emitter voltage (VGES) | +/-20 V |
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| Continuous collector current (TC = 25 C) | 162 A |
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| Continuous collector current (TC = 100 C) | 100 A |
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| Pulsed collector current (tp = 1 ms) | 200 A |
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| Collector-emitter saturation voltage (IC = 100 A, Tvj = 25 C, typ.) | 1.85 V |
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| Collector-emitter saturation voltage (IC = 100 A, Tvj = 150 C, typ.) | 2.35 V |
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| Gate-emitter threshold voltage | 5.6 V to 6.8 V |
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| Diode continuous forward current (IF) | 100 A |
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| Repetitive peak reverse voltage (VRRM) | 1200 V |
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| Maximum power dissipation (Tvj = 175 C) | 595 W |
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Thermal
| Maximum junction temperature (Tvjmax) | 175 C |
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| Operating junction temperature (Tvjop) | 40 C to +150 C |
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| Storage temperature range (TSTG) | 40 C to +125 C |
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| Junction-to-case thermal resistance (per IGBT) | 0.252 K/W |
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| Junction-to-case thermal resistance (per diode) | 0.446 K/W |
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| Case-to-heatsink thermal resistance (per module) | 0.050 K/W |
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Switching
| Turn-on delay time (Tvj = 125 C) | 68 ns |
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| Rise time (Tvj = 125 C) | 44 ns |
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| Turn-off delay time (Tvj = 125 C) | 243 ns |
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| Fall time (Tvj = 125 C) | 104 ns |
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| Turn-on switching loss Eon (Tvj = 125 C) | 14.5 |
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| Turn-off switching loss Eoff (Tvj = 125 C) | 4.36 |
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| Input capacitance (Cies) | 10.8 nF |
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| Gate charge (QG) | 0.84 uC |
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| Internal gate resistance (RGint) | 7.5 ohm |
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Package
| Circuit configuration | 2 in one-package |
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| Isolation voltage (RMS, f = 50 Hz, t = 1 min) | 2500 V |
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| Stray inductance (LCE) | 30 nH |
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| Module lead resistance, terminal to chip | 0.75 mohm |
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Reliability
| Short-circuit withstand time (VCC = 800 V, Tvj = 150 C) | 10 us |
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| Short-circuit current (ISC) | 400 A |
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| Diode recovered charge Qr (IF = 100 A, Tvj = 125 C) | 15.0 uC |
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Applications
- Switching mode power supplies
- Electronic welding machines
- Induction heating equipment
- Industrial motor drives
- Uninterruptible power supplies
- Solar inverters
Supply & contact
Supplied by SinoPro. Quotations, samples, OEM/ODM, inspection, consolidation shipping and after-sales are handled
directly by us. Request pricing and the current technical revision through https://pro.rungiw.xyz/contact.