Product datasheet · pro.rungiw.xyz

StarPower GD100HFQ120C1SD 1200 V / 100 A IGBT Module

StarPower Semiconductor Ltd. · Model GD100HFQ120C1SD · Semiconductors & Electronic Components

Verified 13 Sept 2026

1200 V / 100 A two-in-one IGBT module with 10 us short-circuit capability

The GD100HFQ120C1SD is a 1200 V, 100 A IGBT power module in a two-in-one package using StarPower's low-VCE(sat) trench IGBT technology. It pairs a fast, soft-recovery anti-parallel freewheeling diode with an isolated copper baseplate using DBC technology, and is rated for a 175 C maximum junction temperature with 10 us short-circuit withstand. StarPower positions it for switching mode power supplies, inductive heating and electronic welding equipment.

Highlights

1200 V collector-emitter voltage with 162 A at TC = 25 C and 100 A at TC = 100 C
Low saturation voltage: 1.85 V typical at 100 A and 25 C, 2.35 V at 150 C
10 us short-circuit capability with 400 A short-circuit current at 800 V
Fast and soft reverse recovery anti-parallel FWD with 7.92 uC recovered charge at 25 C
Isolated copper baseplate DBC construction with 2500 V RMS isolation voltage
175 C maximum junction temperature and 595 W maximum power dissipation

Technical parameters

Electrical

Collector-emitter voltage (VCES)	1200 V
Gate-emitter voltage (VGES)	+/-20 V
Continuous collector current (TC = 25 C)	162 A
Continuous collector current (TC = 100 C)	100 A
Pulsed collector current (tp = 1 ms)	200 A
Collector-emitter saturation voltage (IC = 100 A, Tvj = 25 C, typ.)	1.85 V
Collector-emitter saturation voltage (IC = 100 A, Tvj = 150 C, typ.)	2.35 V
Gate-emitter threshold voltage	5.6 V to 6.8 V
Diode continuous forward current (IF)	100 A
Repetitive peak reverse voltage (VRRM)	1200 V
Maximum power dissipation (Tvj = 175 C)	595 W

Thermal

Maximum junction temperature (Tvjmax)	175 C
Operating junction temperature (Tvjop)	-40 C to +150 C
Storage temperature range (TSTG)	-40 C to +125 C
Junction-to-case thermal resistance (per IGBT)	0.252 K/W
Junction-to-case thermal resistance (per diode)	0.446 K/W
Case-to-heatsink thermal resistance (per module)	0.050 K/W

Switching

Turn-on delay time (Tvj = 125 C)	68 ns
Rise time (Tvj = 125 C)	44 ns
Turn-off delay time (Tvj = 125 C)	243 ns
Fall time (Tvj = 125 C)	104 ns
Turn-on switching loss Eon (Tvj = 125 C)	14.5 mJ
Turn-off switching loss Eoff (Tvj = 125 C)	4.36 mJ
Input capacitance (Cies)	10.8 nF
Gate charge (QG)	0.84 uC
Internal gate resistance (RGint)	7.5 ohm

Package

Circuit configuration	2 in one-package
Isolation voltage (RMS, f = 50 Hz, t = 1 min)	2500 V
Stray inductance (LCE)	30 nH
Module lead resistance, terminal to chip	0.75 mohm

Reliability

Short-circuit withstand time (VCC = 800 V, Tvj = 150 C)	10 us
Short-circuit current (ISC)	400 A
Diode recovered charge Qr (IF = 100 A, Tvj = 125 C)	15.0 uC

Applications

Switching mode power supplies
Electronic welding machines
Induction heating equipment
Industrial motor drives
Uninterruptible power supplies
Solar inverters

Manufacturer

StarPower Semiconductor Ltd., Jiaxing, Zhejiang · https://www.powersemi.com

StarPower Semiconductor Ltd. (斯达半导) is a Chinese power-semiconductor manufacturer based at No.988 Kexing Road, Nanhu District, Jiaxing, Zhejiang. It produces IGBT modules, SiC modules, IPM modules, diode modules and discrete power devices for industrial control, automotive electronics, renewable energy and household appliances. The company operates a European sales arm and publishes sales@powersemi.com and +86 573 82585600 as public contacts. An official certificate on its site covers ISO 14001:2015 environmental management for the design, development and production of its power modules.

Sources

https://oooresurs.ru/images/files/GD100HFQ120C1SD.pdf
https://www.powersemi.cc/en/product.html