Technical datasheet · pro.rungiw.xyz

100 V 2.7 mOhm 氮化镓功率晶体管

SinoPro · 型号 SP-SC-002 · 半导体与电子元器件

Verified 13 Sept 2026

100 V 增强型 HEMT,典型导通电阻 2.7 mOhm,3.3 x 3.3 mm 封装

SP-SC-002 是一款 100 V 增强型硅基氮化镓高电子迁移率晶体管(HEMT),采用 3.3 mm x 3.3 mm En-FCLGA 封装。其典型导通电阻 2.7 mOhm,栅极电荷极低(10.3 nC),反向恢复电荷为零,可实现高频高密度功率变换。该器件面向高频 DC-DC 转换器、高密度 DC-DC 电源模块、同步整流、电机驱动和光伏 MPPT 等应用。

核心亮点

技术参数

电气

漏源电压(VDS,最大值)100 V
漏源瞬态电压(累计 1 h,TA = TJMAX)120 V
连续漏极电流(VGS = 5 V,TC = 25 C)180 A
连续漏极电流(VGS = 5 V,TC = 100 C)115 A
连续漏极电流(VGS = 5 V,TA = 25 C)18 A
脉冲漏极电流(TJ = 25 C,100 us)390 A
脉冲漏极电流(TJ = 150 C,100 us)290 A
漏源导通电阻(VGS = 5 V,ID = 2.5 A,典型值)2.7 mohm
漏源导通电阻(VGS = 5 V,最大值)3.5 mohm
栅极阈值电压(VGS(TH),ID = 7.6 mA)0.8 V to 2.1 V
最大栅源电压+6 V / -4 V
栅极-源极瞬态电压(累计 168 h)6.5 V
源漏正向电压(IS = 25 A,VGS = 0 V,典型值)1.9 V
功耗(TC = 25 C)252 W
功耗(TA = 25 C)2.6 W

开关

总栅极电荷(QG,VDS = 0 V 至 50 V,ID = 25 A)10.3 nC
栅极-源极电荷(QGS)2.9 nC
栅极-漏极电荷(QGD)1.2 nC
输出电荷(QOSS,VDS = 0 V 至 50 V)42 nC
反向恢复电荷(QRR)0 nC
输入电容(CISS,VDS = 50 V)1475 pF
输出电容(COSS,VDS = 50 V)425 pF
反向传输电容(CRSS,VDS = 50 V)5.3 pF
栅极电阻(RG,f = 5 MHz)1.5 ohm

热管理

结至壳热阻0.49 C/W
结至板热阻4.16 C/W
结至环境热阻47.13 C/W
工作结温(TJ)40 C to +150 C
存储温度(TSTG)40 C to +150 C

包装

封装类型En-FCLGA 3.3 mm x 3.3 mm
引脚数量与功能9 pins: gate, 4 source, 4 drain

可靠性

最高回流焊温度260 C
湿敏等级(MSL)MSL3

订购

订货代码SP-SC-002
产品代码J67

应用场景

Supply & contact

Supplied by SinoPro. Quotations, samples, OEM/ODM, inspection, consolidation shipping and after-sales are handled directly by us. Request pricing and the current technical revision through https://pro.rungiw.xyz/contact.