Innoscience Technology
Innoscience INN100EA035FAD 100 V Enhancement-mode GaN Power Transistor
100 V e-mode GaN HEMT, 2.7 mOhm typical, 3.3 x 3.3 mm package
- GaN HEMT
The components layer of the supply chain: IGBT and SiC power modules, MCUs, analogue and sensor ICs, connectors, passive components and turnkey PCB/PCBA — sourced against your BOM.