Innoscience Technology · Suzhou, Jiangsu
Innoscience INN100EA035FAD 100 V Enhancement-mode GaN Power Transistor
100 V e-mode GaN HEMT, 2.7 mOhm typical, 3.3 x 3.3 mm package
Overview
The INN100EA035FAD is a 100 V enhancement-mode GaN-on-silicon high-electron-mobility transistor from Innoscience in a 3.3 mm x 3.3 mm En-FCLGA package. It combines 2.7 mOhm typical on-resistance with very low gate charge (10.3 nC) and zero reverse-recovery charge, enabling high-frequency and high-density power conversion. The device is aimed at high-frequency DC-DC converters, high-density DC-DC power modules, synchronous rectification, motor drivers and solar MPPT.
Key highlights
- 100 V drain-source rating with 2.7 mOhm typical RDS(on) at VGS = 5 V
- 180 A continuous drain current at TC = 25 C and 390 A pulsed current
- 10.3 nC total gate charge and 42 nC output charge
- Zero reverse recovery charge (QRR = 0 nC)
- 0.49 C/W junction-to-case thermal resistance in a 3.3 x 3.3 mm package
- En-FCLGA package, product code J67, MSL3 at 260 C reflow
Technical parameters
35 published parameters, grouped. Source links are listed under “Data sources”.
Electrical
| Drain-source voltage (VDS, max.) | 100 V |
|---|---|
| Drain-source transient voltage (1 h total, TA = TJMAX) | 120 V |
| Continuous drain current (VGS = 5 V, TC = 25 C) | 180 A |
| Continuous drain current (VGS = 5 V, TC = 100 C) | 115 A |
| Continuous drain current (VGS = 5 V, TA = 25 C) | 18 A |
| Pulsed drain current (TJ = 25 C, 100 us) | 390 A |
| Pulsed drain current (TJ = 150 C, 100 us) | 290 A |
| Drain-source on-state resistance (VGS = 5 V, ID = 2.5 A, typ.) | 2.7 mohm |
| Drain-source on-state resistance (VGS = 5 V, max.) | 3.5 mohm |
| Gate threshold voltage (VGS(TH), ID = 7.6 mA) | 0.8 V to 2.1 V |
| Maximum gate-to-source voltage | +6 V / -4 V |
| Gate-to-source transient voltage (168 h total) | 6.5 V |
| Source-drain forward voltage (IS = 25 A, VGS = 0 V, typ.) | 1.9 V |
| Power dissipation (TC = 25 C) | 252 W |
| Power dissipation (TA = 25 C) | 2.6 W |
Switching
| Total gate charge (QG, VDS = 0 V to 50 V, ID = 25 A) | 10.3 nC |
|---|---|
| Gate-to-source charge (QGS) | 2.9 nC |
| Gate-to-drain charge (QGD) | 1.2 nC |
| Output charge (QOSS, VDS = 0 V to 50 V) | 42 nC |
| Reverse recovery charge (QRR) | 0 nC |
| Input capacitance (CISS, VDS = 50 V) | 1475 pF |
| Output capacitance (COSS, VDS = 50 V) | 425 pF |
| Reverse transfer capacitance (CRSS, VDS = 50 V) | 5.3 pF |
| Gate resistance (RG, f = 5 MHz) | 1.5 ohm |
Thermal
| Thermal resistance junction-to-case (RthetaJC) | 0.49 C/W |
|---|---|
| Thermal resistance junction-to-board (RthetaJB) | 4.16 C/W |
| Thermal resistance junction-to-ambient (RthetaJA) | 47.13 C/W |
| Operating junction temperature (TJ) | -40 C to +150 C |
| Storage temperature (TSTG) | -40 C to +150 C |
Package
| Package type | En-FCLGA 3.3 mm x 3.3 mm |
|---|---|
| Pin count and function | 9 pins: gate, 4 source, 4 drain |
Reliability
| Maximum reflow soldering temperature | 260 C |
|---|---|
| Moisture sensitivity level (MSL) | MSL3 |
Ordering
| Ordering code | INN100EA035FAD |
|---|---|
| Product code | J67 |
Applications
- 1High-frequency DC-DC converters
- 2High-density DC-DC power modules
- 3Synchronous rectification
- 4Motor drivers
- 5Solar system MPPT
- 648 V data-centre power conversion
Application video
No application video published yet.
We record application walk-throughs for buyers on request — ask us for a live demo or a custom video of this product in operation.
Request an application videoManufacturer
Innoscience Technology
Suzhou, Jiangsu · Private
Innoscience Technology (英诺赛科) is a Chinese GaN-on-silicon power-device manufacturer offering enhancement-mode GaN HEMTs and integrated GaN ICs across low-voltage and high-voltage families. Its devices target high-frequency DC-DC conversion, high-density DC-DC power modules, synchronous rectification, motor drives and solar MPPT. Product selector tables with published voltage, on-resistance, charge and current figures, plus downloadable datasheets, are hosted on the official website. No public sales email or phone number was verified on the official site during this research.
How we supply this product
We are a China-based export and sourcing company. This product is available for quotation through us — we buy from the manufacturer and ship to you, and we stay responsible for inspection and after-sales.
Quote & specification
Send quantity, destination and certification needs. We confirm the exact model, voltage/plug variant and lead time.
Sample & approval
Sample or golden sample for your sign-off; OEM branding, packaging and manual localisation if you need them.
Inspect & ship
Pre-shipment inspection against the agreed specification, then consolidation and shipment on EXW / FOB / CIF / DDP terms.
Not the exact configuration you need? Send the requirement and we will source alternatives, including models not listed in this catalogue.
Data sources & verification
Compiled from publicly available sources and last verified on 13 Sept 2026. Specifications can change without notice — confirm with the manufacturer before ordering.
- innoscience.com https://www.innoscience.com/mtsc/uploads/Ckeditor/Files/2026-09-03/INN100EA035FAD_Datasheet_Rev…
- innoscience.com https://www.innoscience.com/products/lv-gan-hemt
