Innoscience Technology
Innoscience INN100EA035FAD 100 V Enhancement-mode GaN Power Transistor
100 V e-mode GaN HEMT, 2.7 mOhm typical, 3.3 x 3.3 mm package
- GaN HEMT
英诺赛科
Innoscience Technology (英诺赛科) is a Chinese GaN-on-silicon power-device manufacturer offering enhancement-mode GaN HEMTs and integrated GaN ICs across low-voltage and high-voltage families. Its devices target high-frequency DC-DC conversion, high-density DC-DC power modules, synchronous rectification, motor drives and solar MPPT. Product selector tables with published voltage, on-resistance, charge and current figures, plus downloadable datasheets, are hosted on the official website. No public sales email or phone number was verified on the official site during this research.