Sanan Semiconductor Co., Ltd. · Changsha, Hunan
Sanan AMS1200075K 1200 V / 75 mOhm SiC Power MOSFET
AEC-Q101 1200 V SiC MOSFET, 75 mOhm typical, 175 C, TO-247-3L
Overview
The AMS1200075K is a 1200 V, 75 mOhm silicon carbide power MOSFET in a TO-247-3L package from Sanan Semiconductor. It offers high blocking voltage, low on-resistance and low switching losses, with a robust intrinsic body diode and a 175 C maximum operating junction temperature. The device is AEC-Q101 qualified and RoHS compliant, and is aimed at solar inverters, uninterruptible power supplies, switch-mode power supplies and motor drives.
Key highlights
- 1200 V drain-source voltage with 75 mOhm typical on-resistance at VGS = 15 V
- 35 A continuous drain current at 25 C and 25 A at 100 C case temperature
- AEC-Q101 qualified and RoHS compliant for automotive and industrial use
- 175 C maximum operating junction temperature
- 58 nC total gate charge and 1484 pF input capacitance
- TO-247-3L package, ordering part number AMS1200075K-ASATH
Technical parameters
42 published parameters, grouped. Source links are listed under “Data sources”.
Electrical
| Drain-source voltage (VDSmax) | 1200 V |
|---|---|
| Continuous drain current (TC = 25 C, VGS = 15 V) | 35 A |
| Continuous drain current (TC = 100 C) | 25 A |
| Pulsed drain current (ID pulse) | 88 A |
| Drain-source on-state resistance (VGS = 15 V, ID = 18 A, 25 C, typ.) | 75 mohm |
| Drain-source on-state resistance (25 C, max.) | 92 mohm |
| Drain-source on-state resistance (Tj = 175 C, typ.) | 110 mohm |
| Gate threshold voltage (VGS(th), 25 C) | 1.8 V to 4.0 V |
| Recommended gate-source operating voltage (VGSop) | -4 V / +15 V |
| Maximum gate-source transient voltage (tp <= 0.5 us) | -10 V / +22 V |
| Power dissipation (Ptot) | 208 W |
| Transconductance (gfs, VDS = 20 V, ID = 18 A, typ.) | 13 S |
| Internal gate resistance (Rg(int)) | 1.9 ohm |
| Diode forward voltage (VSD, VGS = -4 V, ISD = 9 A, typ.) | 3.5 V |
Thermal
| Thermal resistance junction-to-case (Rth(j-c), typ.) | 0.60 C/W |
|---|---|
| Thermal resistance junction-to-ambient (Rth(j-a), max.) | 40 C/W |
| Operating junction temperature (Tj) | -55 C to +175 C |
| Storage temperature (Tstg) | -55 C to +175 C |
| Soldering temperature (TL, 1.6 mm from case, 10 s) | 260 C |
Switching
| Turn-on delay time (25 C, RG(ext) = 5.1 ohm) | 32 ns |
|---|---|
| Rise time (25 C) | 19 ns |
| Turn-off delay time (25 C) | 25 ns |
| Fall time (25 C) | 13 ns |
| Turn-on switching energy Eon (VDD = 800 V, ID = 20 A, 25 C) | 542 uJ |
| Turn-off switching energy Eoff (25 C) | 78 uJ |
| Turn-on switching energy Eon (Tj = 175 C) | 685 uJ |
| Turn-off switching energy Eoff (Tj = 175 C) | 81 uJ |
| Input capacitance (Ciss, VDS = 1000 V, f = 1 MHz) | 1484 pF |
| Output capacitance (Coss) | 79 pF |
| Reverse transfer capacitance (Crss) | 1 pF |
| Total gate charge (QG, VDD = 800 V, ID = 18 A) | 58 nC |
| Gate-to-drain charge (QGD) | 20 nC |
| COSS stored energy (Eoss) | 44 uJ |
| Reverse recovery time (trr, ISD = 20 A, 25 C) | 38 ns |
| Reverse recovery charge (Qrr, 25 C) | 0.20 uC |
Package
| Package type | TO-247-3L |
|---|---|
| Mounting torque (M3 screw) | 0.7 Nm |
Reliability
| Qualification | AEC-Q101 |
|---|---|
| Compliance | RoHS compliant |
Ordering
| Ordering part number | AMS1200075K-ASATH |
|---|---|
| Unit quantity per packing | 300 EA |
| Packing type | Tube |
Applications
- 1Solar inverters
- 2Uninterruptible power supplies (UPS)
- 3Switch mode power supplies
- 4Motor drives
- 5Energy storage power conversion
- 6Industrial high-frequency power stages
Application video
No application video published yet.
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Request an application videoManufacturer
Sanan Semiconductor Co., Ltd.
Changsha, Hunan · Private
Sanan Semiconductor Co., Ltd. is the silicon-carbide device business of Sanan Optoelectronics, based in the Hi-tech Industrial Development Zone, Changsha, Hunan. It supplies 650 V to 1700 V SiC power MOSFETs and Schottky barrier diodes together with SiC substrate and epitaxy capability, serving solar inverters, UPS, switch-mode power supplies and motor drives. Its contact page publishes sales@sanan-ic.com and +86-731-82735135. The AMS1200075K 1200 V SiC MOSFET in this catalogue is AEC-Q101 qualified.
How we supply this product
We are a China-based export and sourcing company. This product is available for quotation through us — we buy from the manufacturer and ship to you, and we stay responsible for inspection and after-sales.
Quote & specification
Send quantity, destination and certification needs. We confirm the exact model, voltage/plug variant and lead time.
Sample & approval
Sample or golden sample for your sign-off; OEM branding, packaging and manual localisation if you need them.
Inspect & ship
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Not the exact configuration you need? Send the requirement and we will source alternatives, including models not listed in this catalogue.
Data sources & verification
Compiled from publicly available sources and last verified on 13 Sept 2026. Specifications can change without notice — confirm with the manufacturer before ordering.
- sanan-semiconductor.com https://www.sanan-semiconductor.com/Public/Uploads/uploadfile2/files/20250312/SananSemiconducto…
- sanan-semiconductor.com https://www.sanan-semiconductor.com/en/mosfet
