Sanan Semiconductor Co., Ltd. · Changsha, Hunan

Sanan SMS1200032P2 1200 V / 32 mOhm SiC Power MOSFET

1200 V SiC MOSFET with 32 mOhm typical on-resistance in TO-263-7L

RoHS Data confidence: high
Sanan SMS1200032P2 1200 V / 32 mOhm SiC Power MOSFET
Illustrative product graphic. Request the datasheet or current photography from the manufacturer.

Overview

The SMS1200032P2 is a 1200 V, 32 mOhm silicon carbide power MOSFET from Sanan Semiconductor supplied in a surface-mount TO-263-7L package. It combines high blocking voltage with low on-resistance, low switching losses and a fast intrinsic body diode, and operates up to a 175 C junction temperature. The part is RoHS compliant and targeted at solar inverters, uninterruptible power supplies, switch-mode power supplies and motor drives.

Key highlights

  • 1200 V drain-source voltage with 32 mOhm typical RDS(on) at VGS = 18 V
  • 57 A continuous drain current at 25 C and 41 A at 100 C case temperature
  • Low switching loss: 286 uJ Eon and 89 uJ Eoff at 40 A, 25 C
  • Fast body diode with 11 ns turn-on delay and 7 ns fall time at 25 C
  • 0.45 C/W junction-to-case thermal resistance, 175 C maximum junction temperature
  • Surface-mount TO-263-7L package, 143 A pulsed drain current

Technical parameters

37 published parameters, grouped. Source links are listed under “Data sources”.

Electrical

Drain-source voltage (VDSmax)1200 V
Continuous drain current (TC = 25 C, VGS = 18 V)57 A
Continuous drain current (TC = 100 C)41 A
Pulsed drain current (ID pulse)143 A
Drain-source on-state resistance (VGS = 18 V, ID = 40 A, typ.)32 mohm
Drain-source on-state resistance (VGS = 18 V, 25 C, max.)42 mohm
Drain-source on-state resistance (VGS = 15 V, 25 C, typ.)37 mohm
Drain-source on-state resistance (Tj = 175 C, typ.)53 mohm
Gate threshold voltage (VGS(th), 25 C)1.8 V to 4.2 V
Recommended gate-source operating voltage (VGSop)-5 V / +18 V
Maximum gate-source transient voltage (tp <= 0.5 us)-10 V / +25 V
Power dissipation (Ptot)278 W
Transconductance (gfs, VDS = 20 V, ID = 40 A, typ.)24 S
Internal gate resistance (Rg(int))3.6 ohm

Thermal

Thermal resistance junction-to-case (Rth(j-c), typ.)0.45 C/W
Thermal resistance junction-to-ambient (Rth(j-a), max.)62 C/W
Operating junction temperature (Tj)-55 C to +175 C
Storage temperature (Tstg)-55 C to +175 C
Soldering temperature (TL, 10 s)260 C

Switching

Turn-on delay time (25 C, RG(ext) = 2.4 ohm)11 ns
Rise time (25 C)14 ns
Turn-off delay time (25 C)27 ns
Fall time (25 C)7 ns
Turn-on switching energy Eon (VDD = 800 V, ID = 40 A, 25 C)286 uJ
Turn-off switching energy Eoff (25 C)89 uJ
Turn-on switching energy Eon (Tj = 175 C)331 uJ
Turn-off switching energy Eoff (Tj = 175 C)91 uJ
Input capacitance (Ciss, VDS = 1000 V, f = 100 kHz)2160 pF
Output capacitance (Coss)79 pF
Reverse transfer capacitance (Crss)1.2 pF
Total gate charge (QG, VDD = 800 V, ID = 40 A)91 nC
Gate-to-source charge (QGS)30 nC
Gate-to-drain charge (QGD)27 nC
COSS stored energy (Eoss)50 uJ

Package

Package typeTO-263-7L

Reliability

ComplianceRoHS compliant
Intended qualificationIndustrial application

Applications

  • 1Solar inverters
  • 2Uninterruptible power supplies (UPS)
  • 3Switch mode power supplies
  • 4Motor drives
  • 5Energy storage converters
  • 6On-board and industrial battery chargers

Application video

No application video published yet.

We record application walk-throughs for buyers on request — ask us for a live demo or a custom video of this product in operation.

Request an application video

Manufacturer

S

Sanan Semiconductor Co., Ltd.

Changsha, Hunan · Private

Sanan Semiconductor Co., Ltd. is the silicon-carbide device business of Sanan Optoelectronics, based in the Hi-tech Industrial Development Zone, Changsha, Hunan. It supplies 650 V to 1700 V SiC power MOSFETs and Schottky barrier diodes together with SiC substrate and epitaxy capability, serving solar inverters, UPS, switch-mode power supplies and motor drives. Its contact page publishes sales@sanan-ic.com and +86-731-82735135. The AMS1200075K 1200 V SiC MOSFET in this catalogue is AEC-Q101 qualified.

AEC-Q101

How we supply this product

We are a China-based export and sourcing company. This product is available for quotation through us — we buy from the manufacturer and ship to you, and we stay responsible for inspection and after-sales.

1

Quote & specification

Send quantity, destination and certification needs. We confirm the exact model, voltage/plug variant and lead time.

2

Sample & approval

Sample or golden sample for your sign-off; OEM branding, packaging and manual localisation if you need them.

3

Inspect & ship

Pre-shipment inspection against the agreed specification, then consolidation and shipment on EXW / FOB / CIF / DDP terms.

Not the exact configuration you need? Send the requirement and we will source alternatives, including models not listed in this catalogue.

Data sources & verification

Compiled from publicly available sources and last verified on 13 Sept 2026. Specifications can change without notice — confirm with the manufacturer before ordering.

  1. sanan-semiconductor.com https://www.sanan-semiconductor.com/Cn/Skippower/downloadFile?id=2463&mid=26
  2. sanan-semiconductor.com https://www.sanan-semiconductor.com/en/mosfet

Need a variation, OEM version or a volume price?

Different voltage, private label, custom configuration or a container load — tell us the requirement and we will come back with options and pricing.